STUD438S Datasheet, PDF (4/8 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

STU/D438S
30
ID=25A
25
20
15
125 C
10
5
75 C
25 C
0
0
2
4
6
8
10
VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
1800
Ciss
1500
1200
900
600
Coss
300
Crss
0
0
5 10 15 20 25 30
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
Ver 1.4
60
25 C
10
125 C
75 C
1
0 0.25 0.50 0.75 1.00 1.25
VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
VDS=20V
8
ID=25A
6
4
2
0
0 4 8 12 16 20 24 28 32
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
300
800
100
10
TD(off)
Tf
Tr
TD(on)
100
R ^{DS(ON) Limit}
10
100us
DC^10ms1ms
VDS=20V,ID=1A
VGS=10V
1
1
10
100
Rg, Gate Resistance(Ω)
Figure 11. switching characteristics
1
0.3
0.1
VGS=10V
Single Pulse
TA=25 C
1
10
40
VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
Apr,28,2011
4
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