STUD432L Datasheet, PDF (4/8 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

STU/D432L
30
ID=21A
25
20
125 C
15
75 C
10
25 C
5
0
0
2
4
6
8
10
VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
1800
1500
1200
Ciss
900
600
300
0
0
Coss
Crss
5 10 15 20 25 30
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
20.0
10.0
125 C
5.0
75 C
25 C
Ver 1.0
1.0
0 0.24 0.48 0.72 0.96 1.2
VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
8
VDS=20V
ID=21A
6
4
2
0
0 4 8 12 16 20 24 28 32
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
500
100
10
TD(off)
Tf
Tr
TD(on)
VDS=20V,ID=1A
VGS=10V
1
1
10
100
Rg, Gate Resistance(Ω)
Figure 11. switching characteristics
100
R^{DS(ON) Limit}
100us10us
1ms
10
10ms
1
VGS=10V
Single Pulse
TC = 25 C
0.3
0.1
1
10
100
VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
Oct,12,2011
4
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