STUD412S Datasheet, PDF (4/8 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

STU/D412S
60
I D=11A
50
75C
40
125C
30
20
25C
10
0
0
2
4
6
8
10
VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
600
500
Ci ss
400
300
200
100
0
0
Coss
Crss
5
10 15 20
25 30
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
Ver 1.0
20. 0
10. 0
25C
125C
75C
1. 0
0. 4 0. 6 0. 8 1. 0 1. 2 1. 4
VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
VDS=20V
8
I D=11A
6
4
2
0
0 12 34 5 6789
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
600
100
Tr
60
TD( of f )
TD( on)
Tf
10
VDS=20V, I D=1A
VGS=10V
1
1
6 10
60 100 300 600
Rg, Gate Resistance(Ω)
Figure 11. switching characteristics
300
100
10
R ^{DS(ON) Limit}
100us
1ms
10ms
V GS =10V
1
S ingle P ulse
T A=25 C
0.1
1
10 40 100
VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
Aug,07,2008
4
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