STUD35L01 Datasheet, PDF (4/8 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

STU/D35L01
120
ID=15A
100
80
60
125 C
40
20
75 C
25 C
0
0
2
4
6
8
10
VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
3000
C is s
2500
2000
1500
1000
500
C rss
0
0
5
C oss
10 15
20 25 30
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
60
125 C
10
Ver 2.1
75 C
25 C
1
0 0.25 0.50 0.75 1.00 1.25
VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
8
V DS =50V
ID=15A
6
4
2
0
0 5 10 15 20 25 30 35 40
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
100
100
TD(off)
Tr
TD(on)
10us
Tf
10
10
VDS=50V,ID=1A
VGS=10V
1
1
10
100
Rg, Gate Resistance(Ω)
Figure 11. switching characteristics
1
VGS=10V
Single Pulse
TC=25 C
0.3
0.1
1
10
100
VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
Oct,29,2010
4
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