STUD30L01 Datasheet, PDF (4/8 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

STU/D30L01
120
ID=15A
100
80
125 C
60
40
75 C ^{25 C}
20
0
0
2
4
6
8
10
VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
4200
3500
Ciss
2800
2100
1400
700
Coss
0 ^Crss
0
5 10 15 20 25 30
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
Ver 2.0
60
125 C
10
75 C
25 C
1
0 0.25 0.50 0.75 1.00 1.25
VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
VDS=50V
8
ID=15A
6
4
2
0
0 8 16 24 32 40 48 56 64
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
300
100
TD( of f )
TD( on)
Tr
Tf
10
100
10us
10
VDS=50V,ID=1A
VGS=10V
1
1
10
100
Rg, Gate Resistance(Ω)
Figure 11. switching characteristics
1
0.3
0.1
VGS=10V
Single Pulse
TA=25 C
1
10
100
VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
Jul,20,2010
4
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