STUD10N25 Datasheet, PDF (4/10 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

STU10N25
STD10N25
900
I D =4 . 5 A
750
600
125 C
450
75 C
300
150
25 C
0
0
2
4
6
8
10
VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
2400
2000
Ciss
1600
1200
800
400
Coss
Crss
0
0
5 10 15 20 25 30
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
Ver 1.0
20.0
10.0
5.0
125 C
75 C
1.0
0
25 C
0.3
0.6
0.9
1.2
1.5
VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
VDS=125V
8
ID=1A
6
4
2
0
0 4 8 12 16 20 24
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
1000
100
100
10
TD(off )
TD(on)
Tr
Tf
VDS=125V,ID=1A
VGS=10V
1
1
10
100
Rg, Gate Resistance(Ω)
Figure 11. switching characteristics
10
R ^{DS(ON) Limit}
100us
D1C0m1sms
1
0.1
VGS=10V
Single Pulse
TC=25 C
0.01
0.1
1
10
100
1000
VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
Oct,24,2013
4
www.samhop.com.tw