STU413S Datasheet, PDF (4/8 Pages) SamHop Microelectronics Corp. – P-Channel Logic Level Enhancement Mode Field Effect Transistor

STU/D413S
120
ID=-9.5A
100
80
125 C
60
40
75 C
25 C
20
0
0
2
4
6
8
10
VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
1500
1250
Cis s
1000
750
500
Cos s
250
C rss
0
0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
Ver 1.0
20.0
10.0
5.0
75 C
125 C
125
25 C
1.0
0 0.24 0.48 0.72 0.96 1.20
VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
8 ^VDS=-20V
ID=-9.5A
6
4
2
0
0 3 6 9 12 15 18 21 24
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
600
100
60
10
TD(off)
TD(on)
Tr
Tf
100
10
R ^{DS(ON) Limit}
1ms
10ms
V DS =-20V,ID=-1A
1
V G S =-10V
1
6 10
60 100 300 600
Rg, Gate Resistance(Ω)
Figure 11. switching characteristics
1
V GS =-10V
S ingle P ulse
T A=25 C
0.1
1
10 40 100
VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
Aug,08,2008
4
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