STU405DH Datasheet, PDF (4/11 Pages) SamHop Microelectronics Corp. – Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)

S TU405DH
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)
Parameter
Symbol Condition
Min Typ ^C Max Unit
DRAIN-SOURCE DIODE CHARACTERISTICS ^b
Diode Forward Voltage
VSD
VGS = 0V, Is =7A
VGS = 0V, Is =-6A
N-Ch
P-Ch
Notes
a.Pulse Test:Pulse Width㙌300–s,Duty Cycle㙌2%.
b.Guaranteed by design,not subject to production testing.
N-Channel
0.98 1.2
-0.9 -1.2
V
40
V GS =10V
V GS =4.5V
32
20
V GS =4V
16
V GS =3.5V
24
16
V GS =3V
8
V GS =2.5V
0
0 0.5 1 1.5 2 _2.5 3
V DS , Drain-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
12
T j =125 C
-55 C
8
25 C
4
0
0 0.8 1.6 2.4 3.2 4.0 4.8
V G S , G ate-to-S ource Voltage (V )
F igure 2. Trans fer C haracteris tics
72
60
48
V G S =4.5V
36
24
V G S =10V
12
0
1
8
16
24
32
40
ID, Drain C urrent (A)
F igure 3. On-R es is tance vs . Drain C urrent
and G ate V oltage
1.5
V G S =4.5V
1.4
ID=6A
1.3
1.2
V G S =10V
1.1
ID=8A
1.0
0.0
0
25 50 75 100 125 150
T j( C )
T j, J unction T emperature ( C )
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
4