STS2305 Datasheet, PDF (4/7 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

STS2305
Ver 1.0
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
10
VGS = 4.5 V
8
4.0 V
3.7 V
6
3.1 V
2.5 V
4
2
0
0
0.2
0.4
0.6
0.8
1
-VDS - Drain to Source Voltage - V
GATEBTO SOURE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
1.0
ID = -1.0mA
0.9
0.8
0.7
0.6
0.5
0.4
-50
0
50
100
150
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
160
VGS = -2.5 V
-3.1 V
120
-3.7 V
-4.0 V
-4.5 V
80
40
0
0.1
1
10
100
-ID - Drain Current - A
4
FORWARD TRANSFER CHARACTERISTICS
100
10
1
0.1
0.01
0
125°C
75°C
25°C
TA = -25°C
0.5 1 1.5 2 2.5 3
-VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
10
TA = -25°C
25°C
1
75°C
125°C
0.1
0.01
0.01
0.1
1
10
100
-ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
100
ID = -1.7A
75
50
25
0
0
2
4
6
8 10 12
-VGS - Gate to Source Voltage - V
Jan,07,2013
www.samhop.com.tw