STC2201 Datasheet, PDF (4/7 Pages) SamHop Microelectronics Corp. – P-Channel E nhancement Mode Field Effect Transistor

S TC2201
1.3
V DS =V G S
1.2
ID=-250uA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0
25 50 75 100 125
T j, J unction T emperature ( C )
with T emperature
6
5
4
3
2
1
V DS =-5V
0
0
3
6
9
12 15
-IDS , Drain-S ource C urrent (A)
F igure 7. T rans conductance V ariation
with Drain C urrent
5
VDS =-4.5V
4 _ID=-2A
3
2
1
0
0 0.5 1 1.5 2 2.5 3 3.5 4
Qg, T otal G ate C harge (nC )
F igure 9. G ate C harge
4
1.15
ID=-250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125
T j, J unction T emperature ( C )
F igure 6. B reakdown V oltage V ariation
with T emperature
20
10
1
T J=25 C
0
0.4 0.8 1.2 1.6 2.0 2.4
-V S D, B ody Diode F orward V oltage (V )
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
13
10
R ^{DS(ON) Limit}
11
100m¹_s ^0ms
1s
DC
0.1 ^{VGS =-4.5V}
S ingle P ulse
0.03 ^{Tc=25 C}
0.1
1
10 20 50
-V DS , Drain-S ource V oltage (V )
F igure 10. Maximum S afe
O perating Area