SP3902 Datasheet, PDF (4/7 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

SP3902
48
ID=5A
40
32
24
125 C
16
75 C
25 C
8
0
0
2
4
6
8
10
VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
900
750
600
Ciss
450
300
150
0
0
Coss
Crss
5 10 15 20 25 30
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
Ver 1.1
20
10
125 C
25 C
75 C
1
0
0.25 0.50 0.75 1.00 1.25
VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
VDS=15V
8
ID=5A
6
4
2
0
0
2
4
6
8 10 12
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
100
10
TD(off )
Tr
Tf
TD(on)
10
R^{DS(ON) Limit}
1
100us
1ms
1001m0sms
DC
VDS=15V,ID=1A
VGS=10V
1
1
6 10
60 100
Rg, Gate Resistance(Ω)
Figure 11. switching characteristics
VGS=10V
0.1 ^{Single Pulse}
TA=25 C
0.1
1
10
VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
Jul,18,2013
4
www.samhop.com.tw