SP2110 Datasheet, PDF (4/7 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

SP2110
1200
I D =0 . 8 A
1000
800
125 C
600
75 C
400
25 C
200
0
0
2
4
6
8
10
VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
360
300
Ciss
240
180
120
Coss
60
Crss
0
0
5
10 15 20 25 30
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
20
10
125 C
25 C
75 C
Ver 1.0
1
0
0.3 0.6 0.9 1.2 1.5
VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
VDS=50V
8
ID=0.8A
6
4
2
0
0
1
2
3
4
5
6
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
100
TD(off )
10
Tr
TD(on)
Tf
1
VDS=50V,ID=0.8A
VGS=10V
0.1
1
6 10
60 100
Rg, Gate Resistance(Ω)
Figure 11. switching characteristics
10
1
R^{DS(ON) Limit}
100us
DC^100m10sms1ms
0.1
VGS=10V
Single Pulse
TA=25 C
0.01
0.1
1
10
100
VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
Mar,03,2014
4
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