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SP2102 Datasheet, PDF (4/7 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).
SP2102
600
ID=1A
500
400
125 C
300
200
75 C
25 C
100
0
0
2
4
6
8
10
VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
420
350
Ciss
280
210
140
Coss
70
Crss
0
0
5 10 15 20 25 30
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
20
10
125 C
25 C
75 C
Ver 1.0
1
0
0.3 0.6 0.9 1.2 1.5
VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
VDS=50V
8
ID=1A
6
4
2
0
0
1
2
3
4
5
6
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
100
TD(off )
Tr
10
TD(on)
Tf
VDS=50V,ID=1A
VGS=10V
1
1
6 10
60 100
Rg, Gate Resistance(Ω)
Figure 11. switching characteristics
10
RDS(ON) Limit
100us
1ms
1
11s001m0sms
DC
0.1
VGS=10V
0.01 Single Pulse
TA=25 C
0.003
0.1
1
10
100
VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
Jan,03,2014
4
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