SDUD03N70 Datasheet, PDF (4/11 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

SDU/D03N70
12
ID=1.5A
10
125 C
8
6
75 C
4
25 C
2
0
0
2
4
6
8
10
VGS, Gate-Sorce Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
600
500
Ciss
400
300
200
100
Coss
Crss
0
0
10
20
30
40
50
VDS, Drain-to Source Voltage(V)
Figure 9. Capacitance
100
TD(off)
TD(on)
Tr
10
Tf
VDS=350V, ID=1A
VGS=10V
1
1
10
100
Rg, Gate Resistance(Ω)
Figure 11. switching characteristics
20.0
125 C
10.0
5.0
75 C
25 C
Ver 1.1
1.0
0
0.3
0.6
0.9
1.2
1.5
VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
8
VDS=350V
ID=1A
6
4
2
0
0
2
4
6
8 10
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
10
1
DC10m1sms100us
0.1
VGS=10V
0.01
Single Pulse
TA=25 C
0.1
1
10
100 1000
VDS, Drain-Source Voltage (V)
Figure 12. Maximum Safe
Operating Area
Dec,24,2013
4
www.samhop.com.tw