SDM4884 Datasheet, PDF (4/7 Pages) SamHop Microelectronics Corp. – N-Channel E nhancement Mode F ield E ffect Transistor

S DM4884
1.09
1.06
V DS =V G S
ID=250uA
1.03
1.00
5
0.97
0.94
0.91
-50 -25 0 25 50 75 100 125 150
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation
with T emperature
25
20
15
10
5
V DS =15V
0
0
5
10
15
20
IDS , Drain-S ource C urrent (A)
F igure 7. T rans conductance V ariation
with Drain C urrent
10
V DS =15V
8
ID=15A
6
4
2
0
0 7 14 21 28 35 42 49 56
Qg, T otal G ate C harge (nC )
F igure 9. G ate C harge
4
1.15
ID=-250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
T j, J unction T emperature ( C )
F igure 6. B reakdown V oltage V ariation
with T emperature
40.0
10.0
1.0
0.4 0.6 0.8 1.0 1.2 1.4
V S D, B ody Diode F orward V oltage (V )
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
60
10
R ^{DS(ON) Limit}
11
10ms
100ms
1s
DC
0.1
0.03
0.1
VGS =10V
S ingle P ulse
T A=25 C
1
10 30 50
V DS , Drain-S ource V oltage (V )
F igure 10. Maximum S afe
O perating Area