SDF06N60 Datasheet, PDF (4/11 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON

SDP06N60
SDF06N60
4.8
ID= 3A
4.0
3.2
125 C
2.4
75 C
1.6
25 C
0.8
0
0
2
4
6
8
10
VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
2400
2000
1600
1200
C is s
800
C oss
400 _{C rs s}
0
0
10
20
30
40
50
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
20.0
10.0
125 C
Ver 2.1
75 C
25 C
1.0
0
0.25 0.50 0.75 1.00 1.25
VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
8 ^{VDS =300V}
ID= 1A
6
4
2
0
0 3 6 9 12 15 18 21 24
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
10
10
1
1
0.1
0.03
0.1
VGS=10V
Single Pulse
TC=25 C
1
10
100
1000
V DS , Drain-S ource V oltage (V )
Figure 11a. Maximum Safe Operating
Area for SDP06N60
4
0.1
0.03
0.1
VGS=10V
Single Pulse
TC=25 C
1
10
100
1000
V DS , Drain-S ource V oltage (V )
Figure 11b. Maximum Safe Operating
Area for SDF06N60
Dec,24,2013
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