STUD2030PLS Datasheet, PDF (3/9 Pages) SamHop Microelectronics Corp. – S uper high dense cell design for low R DS (ON).

S T U/D2030P LS
E LE CTR ICAL CHAR ACTE R IS TICS (TC=25 C unless otherwise noted)
P a ra meter
S ymbol Condition
DRAIN-SOURCE DIODE CHARACTERISTICS ^a
Diode Forward Voltage
VSD VGS = 0V, Is = -10A
Notes
a.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
Min Typ Max Unit
-0.9 -1.3 V
25
V GS =-4V
20
V GS =-4.5V
15
V GS =-5V
10
V GS =-8V
V GS =-3V
V GS =-10V
5
0
0 0.5 1 1.5 2 _2.5 3
-V DS , Drain-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
20
15
10
T j=125 C
5
25 C
-55 C
0
0 0.7 1.4 2.1 2.8 3.5 4.2
-V G S , G ate-to-S ource Voltage (V )
F igure 2. Trans fer C haracteris tics
60
50
V GS =-4.5V
40
30
V GS =-10V
20
10
0
0
5
10
15
20
25
-ID, Drain C urrent (A)
F igure 3. On-R es is tance vs . Drain C urrent
and G ate V oltage
1.6
1.4
V G S =-10V
ID=-20A
1.2
1.0
0.8
V G S =-4.5V
0.6
ID=-10A
0.4
-55
-25 0 25 50 75 100 125
T j( C )
T j, J unction T emperature ( C )
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
3