STS2300S Datasheet, PDF (3/8 Pages) SamHop Microelectronics Corp. – N-Channel E nhancement Mode Field Effect Transistor

S TS 2300S
E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted)
P a ra meter
S ymbol Condition
DRAIN-SOURCE DIODE CHARACTERISTICS ^b
Diode Forward Voltage
VSD VGS = 0V, Is = 1.25A
Min Typ Max Unit
0.8 1.2 V
Notes
a.Surface Mounted on FR 4 Board, t <=10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
12.5
10
V GS =10V
V GS =2.5V
V GS =4.5V
7.5
V GS =2V
5.0
2.5
V GS =1.5V
0
0 0.5 1 1.5 2 2.5 3
V DS , Drain-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
15
12
9
6
-55 C
3
T j=125 C _{25 C}
0
0 0.5 1.0 1.5 2.0 2.5 3.0
V G S , G ate-to-S ource Voltage (V )
F igure 2. Trans fer C haracteris tics
45
40
V GS =2.5V
35
V GS =4.5V
30
25
20
0
0
2.5
5.0
7.5
10 12.5
ID, Drain C urrent (A)
F igure 3. On-R es is tance vs . Drain C urrent
and G ate V oltage
1.6
1.4
V G S =4.5V
ID=4A
1.2
1.0
V G S =2.5V
0.8
ID=2A
0.6
0.4
25
50
75
100 125 150
T j( C )
T j, J unction T emperature ( C )
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
3