STM9410A Datasheet, PDF (3/7 Pages) SamHop Microelectronics Corp. – N-Channel E nhancement Mode Field Effect Transistor

S TM9410A
E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted)
P a ra meter
S ymbol Condition
DRAIN-SOURCE DIODE CHARACTERISTICS ^b
Diode Forward Voltage
VSD VGS = 0V, Is =1.7A
Min Typ ^C Max Unit
0.79 1.2 V
Notes
a.Surface Mounted on FR 4 Board, t <=10sec.
b.P ulse Test:P ulse Width<=300us, Duty C ycle<= 2%.
c.Guaranteed by design, not subject to production testing.
20
V G S =5V
V G S =4.5V
16
V G S =10V
V G S =4V
12
8
V G S =3.5V
4
V G S =3V
0
0 0.5
1.0 1.5 2.0 2.5 3.0
V DS , Drain-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
25
20
15
125 C
10
-55 C
25 C
5
0
0 0.8 1.6 2.4 3.2 4.0 4.8
V G S , G ate-to-S ource Voltage (V )
F igure 2. Trans fer C haracteris tics
1200
1000
800
C is s
600
400
200
C rss
C oss
0
0 5 10 15 20 25 30
V DS , Drain-to S ource Voltage (V )
F igure 3. C apacitance
1.8
V G S =10V
1.6
ID=6A
1.4
1.2
1.0
0.8
0.6
-55 -25 0 25 50 75 100 125
T j, J unction T emperature ( C )
F igure 4. On-R es is tance Variation with
Te mpe ra ture
3