STM8455 Datasheet, PDF (3/11 Pages) SamHop Microelectronics Corp. – Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)

S TM8455
P-Channel ELECTRICAL CHARACTERISTICS (TA⁼25 C unless otherwise noted)
P a ra meter
S ymbol Condition
Min Typ ^C Max Unit
OFF CHARACTERISTICS
Drain-S ource Breakdown Voltage
BVDSS ^VGS =0V, ^ID =-250uA
Zero Gate Voltage Drain C urrent
IDSS
VDS =-32V, VGS =0V
Gate-Body Leakage
ON CHARACTERISTICS ^b
IGSS
VGS ₌ 20V, VDS =0V
Gate Threshold Voltage
V G S (th)
VDS =VGS, ID = -250uA
Drain-S ource On-S tate R esistance
R DS(ON)
VGS =-10V, ID= -4A
VGS =-4.5V, ID= -3A
On-S tate Drain Current
ID(ON)
Forward Transconductance
g_FS
DYNAMIC CHARACTERISTICS ^c
VDS =-5V, VGS = -10V
VDS =-5V, ID =- 4A
Input Capacitance
C IS S
Output Capacitance
COSS
R everse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS ^c
VDS =-20V, VGS = 0V
f =1.0MHZ
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
Fall Time
tD(ON)
VD = -20V
tr
ID = -4A
VGEN = -10V
tD(O F F )
R GEN = 3.3 ohm
tf
Total Gate C harge
V DS =-24V, ID=-4A, V G S =-10V
Qg
V DS =-24V, ID=-4A, V G S =-4. 5V
Gate-S ource Charge
Gate-Drain C harge
Qgs
VDS =-24V, ID = - 4A
Qgd
VGS =-4.5V
-40
V
-1 uA
100 nA
-1.0 -1.8 -3.0 V
35 42 m ohm
50 62 m ohm
16
A
10
S
900
PF
140
PF
85
PF
12
ns
16
ns
55
ns
30
ns
17.6
nC
8.8
nC
1.8
nC
5
nC
3