STM8301 Datasheet, PDF (3/11 Pages) SamHop Microelectronics Corp. – Dual E nhancement Mode Field E ffect Transistor (N and P Channel)

S TM8301
P-Channel ELECTRICAL CHARACTERISTICS (TA⁼²⁵ C unless otherwise noted)
P a ra meter
S ymbol
C ondition
Min Typ ^C Max Unit
OFF CHARACTERISTICS
Drain-S ource Breakdown Voltage
BVDSS ^VGS =0V, ^ID =-250uA -30
V
Zero Gate Voltage Drain C urrent
IDSS
VDS =-24V, VGS =0V
-1 uA
Gate-Body Leakage
IGSS
VGS ₌ 20V, VDS =0V
100 nA
ON CHARACTERISTICS ^b
Gate Threshold Voltage
V G S (th)
VDS =VGS, ID = -250uA -1 -1.5 -2.5 V
Drain-S ource On-S tate R esistance
R DS(ON)
VGS =-10V, ID= -4.5A
VGS =-4.5V, ID= -3A
50 60 ^{m ohm}
70 80 m ohm
On-S tate Drain Current
ID(ON)
VDS = -10V, VGS = -10V -18
A
Forward Transconductance
g_FS
VDS =-10V, ID = - 4.5A
9
S
DYNAMIC CHARACTERISTICS ^c
Input Capacitance
C IS S
Output Capacitance
COSS
R everse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS ^c
VDS =-15V, VGS = 0V
f =1.0MHZ
586
PF
122
PF
78
PF
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
tD(ON)
VDD = -15V
tr
ID = -1A
VGEN = -10V
tD(O F F )
R GEN = 6 ohm
5.6
ns
4.7
ns
51.8
ns
Fall Time
tf
33.5
ns
Total Gate C harge
V DS =-15V, ID=-4. 5A, V G S =-10V
11.2
nC
Qg
V DS =-15V, ID=-4. 5A, V G S =-4. 5V
5.4
nC
Gate-S ource Charge
Gate-Drain C harge
Qgs
VDS =-15V, ID = - 4.5A,
Qgd
VGS =-10V
1.4
nC
2.7
nC
3