STM7821 Datasheet, PDF (3/7 Pages) SamHop Microelectronics Corp. – N-Channel E nhancement Mode Field Effect Transistor

S TM7821
E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted)
P a ra meter
S ymbol Condition
Min Typ^C Max Unit
5 DRAIN-SOURCE DIODE CHARACTERISTICS ^b
Diode Forward Voltage
VSD VGS = 0V, Is =10A
0.845 1.2 V
Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
d.Guaranteed when external R g=6 ohm and tf < tf max
20
V GS =4V
V GS =4.5V
16
V GS =10V
25
25 C
20
12
15
V GS =3.5V
8
10
T j=125 C
-55 C
4
V GS =3V
5
0
0 0.5
1 1.5
2
2.5
3
V DS , Drain-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
0
0.0 0.7 1.4 2.1 2.8 3.5 4.2
V G S , G ate-to-S ource Voltage (V )
F igure 2. Trans fer C haracteris tics
3000
2400
1800
C is s
1200
600
C rss
0
05
C oss
10 15 20 25 30
V DS , Drain-to S ource Voltage (V )
F igure 3. C apacitance
2.2
V G S =10V
ID=9A
1.8
1.4
1.0
0.6
0.2
0
-50 -25 0 25 50 75 100 125
T j( C )
F igure 4. On-R es is tance Variation with
Te mpe ra ture
3