STM4820 Datasheet, PDF (3/7 Pages) SamHop Microelectronics Corp. – N-Channel Enhancement Mode Field Effect Transistor

STM4820
Ver 1.0
35
VGS=10V
28
21
VGS=4.5V
VGS=4V
VGS=3.5V
14
VGS=3V
7
0
0 0.5 1 1.5 2 2.5 3
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
20
16
12
8
Tj=125 C ^{-55 C}
4
25 C
0
0 0.7 1.4 2.1 2.8 3.5 4.2
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
60
50
40
30
VGS=4.5V
20
VGS=10V
10
1
1
7
14
21
28
35
ID, Drain Current(A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
1.6
1.5
V G S =10V
1.4
I D =8 . 9 A
1.3
1.2
V G S =4.5V
1.1
I D =7 . 5 A
0.0
0
25 50 75 100 125 150
Tj(°C )
Tj, Junction Temperature(°C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.3
1.2
VDS=VGS
ID=250uA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
1.15
ID=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Aug,05,2008
3
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