STM4800S Datasheet, PDF (3/8 Pages) SamHop Microelectronics Corp. – S uper high dense cell design for low R DS (ON).

S TM4800S
E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted)
P a ra meter
S ymbol Condition
DRAIN-SOURCE DIODE CHARACTERISTICS ^b
Diode Forward Voltage
VSD VGS = 0 V, Is = 1.7A
Min Typ Max Unit
0.8 1.2 V
Notes
a.Surface Mounted on FR 4 Board, t <=10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
25
V G S =10V _{V G S =3.5V}
20
V G S =4.5V
15
V G S =3V
10
5
V G S =2.5V
0
0 0.5
1 1.5
2 2.5
3
V DS , Drain-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
20
16
12
125 C
8
25 C
-55 C
4
0
0 0.8 1.6 2.4 3.2 4.0 4.8
V G S , G ate-to-S ource Voltage (V )
F igure 2. Trans fer C haracteris tics
35
30
25
V GS =4.5V
20
15
V GS =10V
10
0
0
5
10
15
20
25
ID, Drain C urrent (A)
F igure 3. On-R es is tance vs . Drain C urrent
and G ate V oltage
1.5
1.4
V G S =10V
ID=8A
1.3
1.2
1.1
V G S =4.5V
ID=7A
1.0
0
0 25 50 75 100 125 150
T j( C )
T j, J unction T emperature ( C )
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
3