STD1224N Datasheet, PDF (3/8 Pages) SamHop Microelectronics Corp. – N-Channel Enhancement Mode Field Effect Transistor

S T U/D1224N
E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted)
P a ra meter
S ymbol Condition
Min Typ^C Max Unit
5 DRAIN-SOURCE DIODE CHARACTERISTICS ^b
Diode Forward Voltage
VSD VGS = 0V, Is =10A
1 1.3 V
Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
10
8
V GS =10,9,8,7,6,5,4,3V
6
V GS =2V
4
2
0
0
24
6
8 10 12
V DS , Drain-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
25
25 C
20
-55 C
15
T j=125 C
10
5
0
0.0 0.6 1.2 1.8 2.4 3.0 3.6
V G S , G ate-to-S ource Voltage (V )
F igure 2. Trans fer C haracteris tics
1500
1200
900
600
300
0
0
C rss
2
4
C is s
C oss
6 8 10 12
V DS , Drain-to S ource Voltage (V )
F igure 3. C apacitance
2.2
V G S =4.5V
ID=6A
1.8
1.4
1.0
0.6
0.2
0
-50 -25 0 25 50 75 100 125
T j( C )
F igure 4. On-R es is tance Variation with
Te mpe ra ture
3