STBP434S Datasheet, PDF (3/8 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

STB/P434S
100
V GS =10V
80
60
V GS =4V
V GS =3.5V
40
V GS =3V
20
V GS =2.5V
0
0 0.5
1
1.5
2
2.5
3
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
20
16
12
VGS=4.5V
8
VGS=10V
4
1
1
20
40
60
80 100
ID, Drain Current(A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Ver 1.0
60
48
36
-55 C
24
T j=125 C
12
25 C
0
0 0.7 1.4 2.1 2.8 3.5 4.2
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
2.0
1.8
VGS=10V
ID=30A
1.6
1.4
VGS=4.5V
1.2
ID=25A
1.0
0
0
25 50 75 100 125 150
Tj(°C )
Tj, Junction Temperature(°C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
1.4
V DS =V G S
ID=250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation
with Temperature
1.40
ID=250uA
1.30
1.20
1.10
1.00
0.90
0.80
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 6. Breakdown Voltage Variation
with Temperature
Nov,14,2008
3
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