STBP432S Datasheet, PDF (3/8 Pages) SamHop Microelectronics Corp. – Super high dense cell design for extremely low RDS(ON).

STB/P432S
60
V G S =4 V
50
VGS = 4.5V
40
VGS = 10V
30
20
V G S =3 V
10
VGS = 2.5V
0
0 0.5 1 1.5 2 2.5 3
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
20
T j =125 C
15
-55 C
10
25 C
5
Ver 1.0
0
0
0.8 1.6 2.4 3.2 4.0 4.8
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
15
12
VGS = 4.5V
9
6
VGS = 10V
3
1
1
12
24
36
48
60
ID, Drain Current(A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
2.0
1.8
1.6
V G S =10V
1.4
ID=30A
1.2
V G S =4.5V
ID=28A
1.0
0
0 25 50 75 100 125 150
Tj(°C )
Tj, Junction Temperature(°C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.3
1.2
V DS =V G S
ID=250uA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation
with Temperature
1.15
1.10
ID=250uA
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 6. Breakdown Voltage Variation
with Temperature
Jun,24,2008
3
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