SDUD05N70 Datasheet, PDF (3/11 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

SDU/D05N70
10
VGS = 10V
8
VGS = 6V
6
VGS = 5V
4
2
VGS = 4V
0
0
5 10 15 20 25 30
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
6
5
4
3
2
V G S =10V
1
0
0.1
2
4
6
8
ID, Drain Current (A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
1.6
1.4
V DS =V G S
ID=250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature ( C)
Figure 5. Gate Threshold Variation
with Temperature
3
Ver 1.1
4.0
3.2
Tj=125 C
2.4
1.6
25 C
-55 C
0.8
0
0 1.2 2.4 3.6 4.8 6.0 7.2
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
3.0
2.6
2.2
V G S =10V
ID= 2.5A
1.8
1.4
1.0
0
0 25 50 75 100 125 150
Tj( C)
Tj, Junction Temperature ( C)
Figure 4. On-Resistance Variation with
Drain Current and Temperature
1.15
ID=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature ( C)
Figure 6. Breakdown Voltage Variation
with Temperature
Dec,24,2013
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