STUD10N10 Datasheet, PDF (2/10 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

STU10N10
STD10N10
Ver 1.0
ELECTRICAL CHARACTERISTICS (TC=25^°C unless otherwise noted⁾
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
VGS=0V , ID=10mA
100
IDSS
Zero Gate Voltage Drain Current
VDS=80V , VGS=0V
IGSS
Gate-Body Leakage Current
VGS= ±20V , VDS=0V
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
VDS=VGS , ID=250uA
1
RDS(ON)
g_FS
Drain-Source On-State Resistance
Forward Transconductance
VGS=10V , ID=2.5A
VGS=4.5V , ID=2.3A
VDS=10V , ID=2.5A
DYNAMIC CHARACTERISTICS ^b
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
VDS=25V,VGS=0V
f=1.0MHz
SWITCHING CHARACTERISTICS ^b
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD=50V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=50V,ID=2.5A,VGS=10V
VDS=50V,ID=2.5A,VGS=4.5V
VDS=50V,ID=2.5A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
Diode Forward Voltage
VGS=0V,IS=1A
Notes
a.Pulse Test:Pulse Width <_ 10us, Duty Cycle <_ 1%.
b.Guaranteed by design, not subject to production testing.
c.Drain current limited by maximum junction temperature.
d.Starting TJ=25^°C,L=0.5mH,VDD = 50V.(See Figure13)
e.Mounted on FR4 Board of 1 inch² , 2oz.
Typ Max Units
V
1
uA
±100 nA
1.8
3
V
496 620 m ohm
534 721 m ohm
8
S
245
pF
22
pF
14
pF
8
ns
10
ns
15.5
ns
2.6
ns
4.3
nC
2.3
nC
0.8
nC
1.4
nC
0.82 1.3
V
Jun,12,2014
2
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