STU402D Datasheet, PDF (2/7 Pages) SamHop Microelectronics Corp. – Dual N-Channel E nhancement Mode Field Effect Transistor

S TU402D
E LE CTR ICAL CHAR ACTE R IS TICS (TA =25 C unless otherwise noted)
P a ra meter
OFF CHARACTERISTICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain C urrent
Gate-Body Leakage
ON CHARACTERISTICS ^b
Gate Threshold Voltage
S ymbol
BVDSS
IDSS
IGSS
V G S (th)
Drain-S ource On-S tate R esistance R DS(ON)
On-S tate Drain Current
ID(ON)
Forward Transconductance
g_FS
DYNAMIC CHARACTERISTICS ^c
Input Capacitance
C IS S
Output Capacitance
COSS
R everse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS ^c
Turn-On Delay Time
tD(ON)
R ise Time
tr
Turn-Off Delay Time
tD(O F F )
Fall Time
tf
Total Gate Charge (10V)
Qg
Total Gate Charge (4.5V)
Qg
Gate-S ource Charge
Qgs
Gate-Drain C harge
Qgd
C ondition
VGS _=0V, ID =250uA
VDS =32V, VGS =0V
VGS ₌ 20V, VDS= 0V
VDS =VGS , ID = 250uA
VGS =10V, ID =8A
VGS = 4.5V, ID=6A
VDS = 5V, VGS = 4.5V
VDS = 5V, ID=8A
VDS =25V, VGS = 0V
f =1.0MHZ
VDD = 20V,
ID = 1A,
VGS = 10V,
R L = 20 ohm
R GEN = 6 ohm
VDS =28V, ID = 8A,
VGS =10V
Min Typ ^C Max Unit
40
V
1 uA
100 nA
1 1.8 3.0 V
23 30 ^m-ohm
32 40 ^m-ohm
10
A
12
S
770
PF
103
PF
65
PF
13
ns
10
ns
27
ns
6
ns
17
nC
8.7
nC
1.9
nC
4.5
nC
2