STU320S Datasheet, PDF (2/8 Pages) SamHop Microelectronics Corp. – N-Channel Logic Level Enhancement Mode Field Effect Transistor

STU/D320S
Ver 1.0
ELECTRICAL CHARACTERISTICS (TC=25^°C unless otherwise noted⁾
Symbol Parameter
Conditions
Min ^Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VGS=0V , ID=250uA
VDS=24V , VGS=0V
VGS= ±20V , VDS=0V
30
V
1
A
±10 uA
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
g_FS
Forward Transconductance
DYNAMIC CHARACTERISTICS ^c
CISS
COSS
CRSS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS ^c
tD(ON)
Turn-On DelayTime
tr
Rise Time
tD(OFF)
Turn-Off DelayTime
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=15A
VGS=4.5V , ID=12.5A
VDS=10V , ID=15A
VDS=15V,VGS=0V
f=1.0MHz
VDD=15V
ID=1A
VGS=10V
RGEN=6 ohm
VDS=15V,ID=15A,VGS=10V
VDS=15V,ID=15A,VGS=4.5V
VDS=15V,ID=15A,
VGS=10V
1
1.8
3
V
16 20 m ohm
22 29 m ohm
12
S
430
pF
140
pF
88
pF
8
ns
13
ns
16
ns
30
ns
8
nC
4
nC
0.9
nC
2.5
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Maximum Continuous Drain-Source Diode Forward Current
VSD
Diode Forward Voltage ^b
VGS=0V,IS=2.2A
2.2
A
0.8 1.3
V
Notes
a.Surface Mounted on FR4 Board,t<_10 sec.
b.Pulse Test:Pulse Width <_ 300us, Duty Ctcle <_ 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25^°C,L=0.5mH,RG=25Ω,VDD=30V,VGS=10V .(See Figure13)
e.Package current limitation is 20A.
Aug,11,2008
2
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