STU3030NLS Datasheet, PDF (2/9 Pages) SamHop Microelectronics Corp. – N-Channel Logic Level E nhancement Mode Field Effect Transistor

S T U/D3030NLS
E LE CTR ICAL CHAR ACTE R IS TICS (TC=25 C unless otherwise noted)
P a ra meter
S ymbol Condition
Min Typ ^C Max Unit
5 OFF CHARACTERISTICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain C urrent
Gate-Body Leakage
ON CHARACTERISTICS ^a
Gate Threshold Voltage
BVDSS ^VGS =0V, ^ID =250uA
30
IDSS
VDS =24V, VGS =0V
IGSS
VGS ₌ 20V, VDS= 0V
V
1 ^uA
100 nA
VGS(th) VDS =VGS, ID = 250uA 1 1.7 3 V
Drain-S ource On-S tate R esistance
R DS(ON)
VGS =10V, ID =20A
VGS =4.5V, ID= 12A
13 18 m ohm
18 25 m ohm
On-S tate Drain Current
ID(ON) VDS = 10V, VGS = 10V 50
A
Forward Transconductance
g_FS
DYNAMIC CHARACTERISTICS ^b
VDS = 10V, ID = 20A
25
S
Input Capacitance
Output Capacitance
R everse Transfer Capacitance
C IS S
VDS =15V, VGS = 0V
COSS
f =1.0MHZ
CRSS
830
PF
180
PF
120
PF
Gate resistance
R g VGS =0V, VDS = 0V, f=1.0MHZ
3
ohm
SWITCHING CHARACTERISTICS ^b
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
Fall Time
tD(ON) _{VDD = 15V}
tr ^{ID = 1 A}
tD(O F F )
VGS = 10V
R GEN = 6 ohm
tf
11
ns
16
ns
35
ns
10
ns
Total Gate C harge
Qg ^{VDS =15V, ID =20A,VGS =10V}
17
nC
Gate-S ource Charge
Gate-Drain C harge
VDS =15V, ID =20A,VGS =4.5V
9
nC
Qgs _{VDS =15V, ID = 20A}
Qgd ^{VGS =10V}
1.8
nC
5
nC
2