STU20N03L Datasheet, PDF (2/8 Pages) SamHop Microelectronics Corp. – N-Channel Logic Level E nhancement Mode F ield E ffect Transistor

STU/D20N03L
ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS ^a
Gate Threshold Voltage
Drain-Source On-State Resistance
BVDSS
VGS = 0V, ID = 250uA
IDSS
VDS = 24V, VGS = 0V
IGSS
VGS = 20V, VDS = 0V
VGS(th)
VDS = VGS, ID = 250uA
VGS = 10V, ID =20A
RDS(ON)
VGS = 4.5V, ID = 10A
On-State Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall time
ID(ON)
g_FS
b
CISS
COSS
CRSS
b
tD(ON)
t
tD(OFF)
t
VDS = 10V, VGS = 10V
VDS = 10V, ID = 20A
VDs =25V, VGS = 0V
f = 1.0MHZ
VDD = 15V
ID =1A
VGS = 10V
R L = 15 ohmRGEN = 11
ohm
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg ^{VDD = 15V,ID = 1A,VGS =10V}
VDS = 15V,ID = 1A,VGS =4.5V
Qgs
VDD = 15V, ID = 1A
Qgd
RL=15 ohm
2
Min Typ Max Unit
30
V
1 uA
100 nA
1 1.5 2.5 V
17 23 ^{m ohm}
30 ₃₉ m ohm
50
A
8
S
614
PF
83
PF
61
PF
15.2
ns
4.5
ns
23.3
ns
12.7
ns
17.8
nC
8.8
nC
2.8
nC
3
nC