STU1955NL Datasheet, PDF (2/8 Pages) SamHop Microelectronics Corp. – N-Channel E nhancement Mode Field Effect Transistor

S T U/D1955NL
N-Channel ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
P a ra meter
S ymbol Condition
Min Typ ^C Max Unit
5 OFF CHARACTERISTICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain C urrent
Gate-Body Leakage
ON CHARACTERISTICS ^b
Gate Threshold Voltage
BVDSS ^VGS =0V, ^ID =250uA
55
IDSS
VDS =44V, VGS =0V
IGSS
VGS ₌ 20V, VDS= 0V
V
1 ^uA
100 nA
VGS(th) VDS =VGS, ID = 250uA 1.0 1.9 ^3.0 V
Drain-S ource On-S tate R esistance
R DS(ON)
VGS =10V, ID =8A
VGS =4.5V, ID= 4A
42 ₅₅ m ohm
65 80 ^{m ohm}
On-S tate Drain Current
ID(ON) VDS = 5V, VGS = 10V 15
A
Forward Transconductance
g_FS
DYNAMIC CHARACTERISTICS ^c
VDS = 10V, ID = 8A
10
S
Input Capacitance
Output Capacitance
R everse Transfer Capacitance
C IS S
VDS =30V, VGS = 0V
COSS
f =1.0MHZ
CRSS
635 718 PF
75 87 PF
50 57 PF
Gate resistance
R g VGS =0V, VDS = 0V, f=1.0MHZ
2.6
ohm
SWITCHING CHARACTERISTICS ^c
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
Fall Time
tD(ON) _{VDD = 30V}
tr ^{ID = 8 A}
tD(O F F )
VGS = 10V
R GEN = 6 ohm
tf
10.6 ₁₃ ns
5.3 6 ^ns
14.5 ₁₇ ns
9.8 ₁₁ ns
Total Gate C harge
Qg ^{VDS =15V, ID =8A,VGS =10V}
12.8 14 nC
Gate-S ource Charge
Gate-Drain C harge
VDS =15V, ID =8A,VGS =5V
Qgs _{VDS =15V, ID = 8A}
Qgd ^{VGS =10V}
2
7.1 ₈ ^nC
2.6 3 ^nC
3.8 ₅ ^nC