STT3418 Datasheet, PDF (2/7 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

STT3418
Ver 1.0
ELECTRICAL CHARACTERISTICS (TA=25^°C unless otherwise noted⁾
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
30
IDSS
Zero Gate Voltage Drain Current
VDS=24V , VGS=0V
IGSS
Gate-Body Leakage Current
VGS= ±20V , VDS=0V
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
VDS=VGS , ID=250uA
1
RDS(ON)
g_FS
Drain-Source On-State Resistance
Forward Transconductance
VGS=10V , ID=2.5A
VGS=4.5V , ID=2A
VDS=10V , ID=2.5A
DYNAMIC CHARACTERISTICS ^c
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
VDS=15V,VGS=0V
f=1.0MHz
SWITCHING CHARACTERISTICS ^c
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
VDD=15V
ID=1A
VGS=10V
RGEN= 6 ohm
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=15V,ID=2.5A,VGS=10V
VDS=15V,ID=2.5A,VGS=4.5V
VDS=15V,ID=2.5A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
Diode Forward Voltage
VGS=0V,IS=2.5A
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec.
b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25^°C,L=0.5mH,VDD = 20V.(See Figure13)
Typ
1.7
31
47
9
351
69
52
8
11.2
16.5
4.6
5.8
3.2
1
1.8
0.86
Max Units
V
1
uA
±100 nA
3
V
39 m ohm
63 m ohm
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
1.2 V
Nov,22,2012
2
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