STS8217 Datasheet, PDF (2/7 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

STS8217
Ver 1.1
ELECTRICAL CHARACTERISTICS (TA=25^°C unless otherwise noted⁾
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
24
IDSS
Zero Gate Voltage Drain Current
VDS=20V , VGS=0V
IGSS
Gate-Body Leakage Current
VGS= ±12V , VDS=0V
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
g_FS
Forward Transconductance
DYNAMIC CHARACTERISTICS ^c
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS ^c
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=VGS , ID=1mA
VGS=4.0V , ID=3.5A
VGS=3.7V , ID=3.5A
VGS=3.1V , ID=3.5A
VGS=2.5V , ID=3.5A
VDS=5V , ID=3.5A
VDS=10V,VGS=0V
f=1.0MHz
VDD=20V
ID=3.5A
VGS=4V
RGEN= 6 ohm
VDS=20V,ID=7A,
VGS=4V
0.5
13
13.5
14.5
15
Typ
0.85
15
15.5
16.5
20
16
564
188
174
20
71.2
88
81.6
10.7
1.6
4.8
Max Units
V
1
uA
±10 uA
1.5
V
16.5 m ohm
17 m ohm
18 m ohm
27 m ohm
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
Diode Forward Voltage
VGS=0V,IS=3A
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec.
b.Pulse Test:Pulse Width <_ 10us, Duty Cycle <_ 1%.
c.Guaranteed by design, not subject to production testing.
0.81 1.2
V
May,07,2012
2
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