STM8457 Datasheet, PDF (2/11 Pages) SamHop Microelectronics Corp. – Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)

S TM8457
N-Channel ELECTRICAL CHARACTERISTICS (TA⁼25 C unless otherwise noted)
P a ra meter
S ymbol Condition
Min Typ ^C Max Unit
5 OFF CHARACTERISTICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain C urrent
Gate-Body Leakage
ON CHARACTERISTICS ^b
Gate Threshold Voltage
BVDSS ^VGS =0V, ^ID =250uA
40
IDSS
VDS =32V, VGS =0V
IGSS
VGS ₌ 20V, VDS= 0V
V
1 ^uA
10 uA
VGS(th) VDS =VGS, ID = 250uA 1.0 1.8 3.0 V
Drain-S ource On-S tate R esistance
R DS(ON)
VGS =10V, ID =5A
VGS =4.5V, ID=4A
20 26 m ohm
27 33 m ohm
On-S tate Drain Current
ID(ON) VDS = 5V, VGS = 10V
20
A
Forward Transconductance
g_FS
VDS = 5V, ID = 5A
15
S
DYNAMIC CHARACTERISTICS ^c
Input Capacitance
C IS S
Output Capacitance
COSS
R everse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS ^c
VDS =20V, VGS = 0V
f =1.0MHZ
750
PF
125
PF
75
PF
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
tD(ON) _{VDD = 20V}
tr
ID = 1 A
VGS = 10V
tD(OFF) _{R GEN = 3.3 ohm}
13
ns
11
ns
37
ns
Fall Time
tf
10
ns
Total Gate C harge
VDS =24V, ID =5A,VGS =10V
Qg
12.5
nC
VDS =24V, ID =5A,VGS =4.5V
6.4
nC
Gate-S ource Charge
Gate-Drain C harge
Qgs
VDS =24V, ID = 5 A
Qgd
VGS =4.5V
1.8
nC
3.6
nC
2