STBP60L60 Datasheet, PDF (2/8 Pages) SamHop Microelectronics Corp. – Super high dense cell design for extremely low RDS(ON).

STB/P60L60
Ver 2.0
ELECTRICAL CHARACTERISTICS (TC=25^°C unless otherwise noted⁾
4 _{Symbol Parameter}
Conditions
Min
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage VGS=0V , ID=250uA
60
IDSS
Zero Gate Voltage Drain Current VDS=48V , VGS=0V
IGSS
Gate-Body leakage current
VGS= ±20V , VDS=0V
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
VDS=VGS , ID=250uA
1
RDS(ON)
g_FS
Drain-Source On-State Resistance
Forward Transconductance
VGS=10V , ID=25A
VGS=4.5V , ID=20A
VDS=10V , ID=25A
DYNAMIC CHARACTERISTICS ^C
CISS
COSS
CRSS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS ^C
tD(ON)
tr
Turn-On DelayTime
Rise Time
tD(OFF)
tf
Turn-Off DelayTime
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=15V,VGS=0V
f=1.0MHz
VDD=15V
ID=1A
VGS=10V
RGEN=60 ohm
VDS=15V,ID=25A,VGS=10V
VDS=15V,ID=25A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS
VSD
Diode Forward Voltage
VGS=0V,IS=10A
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec.
b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25^°C,L=1.25mH,VDD = 30V.(See Figure13)
Typ
2
21
32
26
1830
182
120
45
70
125
38
28
4.5
9
0.84
Max Units
V
1
A
±100 nA
3
V
25 m ohm
42 m ohm
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.3
V
Sep,14,2010
2
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