STBP454 Datasheet, PDF (2/8 Pages) SamHop Microelectronics Corp. – Super high dense cell design for extremely low RDS(ON).

STB/P454
Ver 1.1
ELECTRICAL CHARACTERISTICS (TC=25^°C unless otherwise noted⁾
4 _{Symbol Parameter}
Conditions
Min
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage VGS=0V , ID=250uA
40
IDSS
Zero Gate Voltage Drain Current VDS=32V , VGS=0V
IGSS
Gate-Body leakage current
VGS= ±20V , VDS=0V
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
VDS=VGS , ID=250uA
1
RDS(ON)
Drain-Source On-State Resistance ^{VGS=10V , ID=40A}
VGS=4.5V , ID=31A
g_FS
Forward Transconductance
VDS=20V , ID=40A
DYNAMIC CHARACTERISTICS ^b
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS ^b
tD(ON)
tr
Turn-On DelayTime
Rise Time
tD(OFF)
tf
Turn-Off DelayTime
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=20V,VGS=0V
f=1.0MHz
VDD=20V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=20V,ID=25A,VGS=10V
VDS=20V,ID=25A,VGS=4.5V
VDS=20V,ID=25A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS
VSD
Diode Forward Voltage
VGS=0V,IS=10A
Notes
a.Drain current limited by maximum junction temperature.
b.Guaranteed by design, not subject to production testing.
c.Starting TJ=25^°C,L=0.5mH,VDD = 20V.(See Figure13)
Typ _{Max Units}
V
1
uA
±100 nA
2
3
V
3.6 4.8 m ohm
5.3 7.2 m ohm
111
S
3750
pF
590
pF
500
pF
70
ns
103
ns
170
ns
75
ns
67
nC
33
nC
5.2
nC
22
nC
0.79 1.3
V
May,17,2013
2
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