STBP438A Datasheet, PDF (2/8 Pages) SamHop Microelectronics Corp. – Super high dense cell design for extremely low RDS(ON).

STB/P438A
Ver 1.0
ELECTRICAL CHARACTERISTICS ⁽TC=25^°C unless otherwise noted⁾
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
40
IDSS
Zero Gate Voltage Drain Current
VDS=32V , VGS=0V
IGSS
Gate-Body leakage current
VGS= ±20V , VDS=0V
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
VDS=VGS , ID=250uA
1
RDS(ON)
g_FS
Drain-Source On-State Resistance
Forward Transconductance
VGS=10V , ID=30A
VGS=4.5V , ID=26A
VDS=10V , ID=30A
DYNAMIC CHARACTERISTICS ^c
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
VDS=20V,VGS=0V
f=1.0MHz
SWITCHING CHARACTERISTICS ^c
tD(ON)
Turn-On DelayTime
tr
Rise Time
tD(OFF)
Turn-Off DelayTime
tf
Fall Time
VDD=20V
ID=1A
VGS=10V
RGEN=6 ohm
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=20V,ID=25A,VGS=10V
VDS=20V,ID=25A,VGS=4.5V
VDS=20V,ID=25A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
Diode Forward Voltage
VGS=0V,IS=2A
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec.
b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25^°C,VDD=20V,L=0.5mH.(See Figure13)
Typ
1.8
6.8
8.1
69
1540
248
180
28
31
62
36
26.5
12.5
2.8
7.8
0.77
Max Units
V
1
A
±100 nA
3
V
8.5 m ohm
11 m ohm
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
1.3
V
Aug,02,2010
2
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