SP2702 Datasheet, PDF (2/7 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

SP2702
Ver 1.0
ELECTRICAL CHARACTERISTICS (TA=25^°C unless otherwise noted⁾
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
75
IDSS
Zero Gate Voltage Drain Current
VDS=60V , VGS=0V
IGSS
Gate-Body Leakage Current
VGS= ±20V , VDS=0V
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
VDS=VGS , ID=250uA
1
RDS(ON)
g_FS
Drain-Source On-State Resistance
Forward Transconductance
VGS=10V , ID=0.8A
VGS=4.5V , ID=0.7A
VDS=10V , ID=0.8A
SWITCHING CHARACTERISTICS ^b
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD=37.5V
ID=0.8A
VGS=10V
RGEN= 6 ohm
VDS=37.5V,ID=0.8A,VGS=10V
VDS=37.5V,ID=0.8A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
Diode Forward Voltage
VGS=0V,IS=1A
Notes
a.Pulse Test:Pulse Width <_ 10us, Duty Cycle <_ 1%.
b.Guaranteed by design, not subject to production testing.
c.Drain current limited by maximum junction temperature.
d.Starting TJ=25^°C,L=0.5mH,VDD = 40V.(See Figure12)
e.Mounted on FR4 Board of 1 inch² , 2oz.
Typ
2
410
455
3.6
60
48
872
162
3.4
0.86
1.1
0.85
Max Units
V
1
uA
±10 uA
3
V
513 m ohm
614 m ohm
S
ns
ns
ns
ns
nC
nC
nC
1.2
V
Aug,19,2014
2
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