SDM9435A Datasheet, PDF (2/5 Pages) SamHop Microelectronics Corp. – P -Channel E nhancement Mode MOS FET

S DM9435A
E LE CTR ICAL CHAR ACTE R IS TICS (TA =25 C unless otherwise noted)
P a ra meter
S ymbol
C ondition
Min Typ ^C Max Unit
5 ^{OFF CHARACTERISTICS}
Drain-S ource Breakdown Voltage BVDSS VGS =0V, ID =-250uA -30
Zero Gate Voltage Drain C urrent
IDSS
VDS =-24V, VGS =0V
Gate-Body Leakage
ON CHARACTERISTICS ^b
IGSS
VGS ₌ 20V, VDS =0V
V
-1 uA
100 nA
Gate Threshold Voltage
V G S (th)
VDS =VGS, ID = -250uA -1 -1.5 -3 V
Drain-S ource On-S tate R esistance R DS(ON)
VGS = -10V, ID =-5.3A
VGS = -4.5V, ID = -4.2A
40 50 ^m-ohm
67 90 ^m-ohm
On-S tate Drain Current
ID(ON)
VDS = -5V, VGS = -10V -20
A
Forward Transconductance
g_FS
VDS =-15V, ID = - 5.3A
9
S
DYNAMIC CHARACTERISTICS ^c
Input Capacitance
C IS S
Output Capacitance
COSS
R everse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS ^c
VDS =-15V, VGS = 0V
f =1.0MHZ
860
PF
470
PF
180
PF
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
tD(ON)
VD = -15V,
tr
ID = -1A,
VGEN = - 10V,
tD(O F F )
R GEN = 6 -ohm
9 20 ns
10 40 ns
37 90 ns
Fall Time
tf
23 110 ns
Total Gate C harge
VDS =-15V,ID =-5.3A,VGS =-10V
Qg
VDS =-15V,ID =-5.3A,VGS =-4.5V
15 20 nC
8.7 10.5 nC
Gate-S ource Charge
Gate-Drain C harge
Qgs
VDS =-15V, ID = -5.3A,
Qgd
VGS =-10V
3
nC
4
nC
2