SDF04N60 Datasheet, PDF (2/11 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON)

SDP04N60
SDF04N60
Ver 2.2
ELECTRICAL CHARACTERISTICS (TC=25^°C unless otherwise noted⁾
4 _{Symbol Parameter}
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=480V , VGS=0V
VGS= ±30V , VDS=0V
600
V
1
uA
±100 nA
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
g_FS
Forward Transconductance
DYNAMIC CHARACTERISTICS ^b
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS ^b
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=2A
VDS=20V , ID=2A
VDS=25V,VGS=0V
f=1.0MHz
VDD=300V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=300V,ID=1A,VGS=10V
VDS=300V,ID=1A,
VGS=10V
2
3
4
V
2.0 2.5 ohm
2.5
S
500
pF
57
pF
14
pF
20
ns
17
ns
24
ns
11
ns
11.5
nC
2
nC
5.3
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
Diode Forward Voltage
VGS=0V,IS=1A
Notes
a.Drain current limited by maximum junction temperatrue.
b.Guaranteed by design, not subject to production testing.
c.Starting TJ=25^°C,L=50mH,VDD = 50V.(See Figure12)
0.765 1.4
V
Dec,24,2013
2
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