STUD616S Datasheet, PDF (1/8 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

STU/D616S ^Green
Product
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver1.1
PRODUCT SUMMARY
VDSS
ID
RDS(ON) (mΩ) Typ
64 @ VGS=10V
60V
16A
81 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
D
G
S
STU SERIES
TO-252AA(D-PAK)
G
DS
STD SERIES
TO-251(l-PAK)
ABSOLUTE MAXIMUM RATINGS (TC=25^°C unless otherwise noted⁾
Symbol
Parameter
Limit
V_DS
Drain-Source Voltage
60
V_GS
Gate-Source Voltage
±20
I_D
Drain Current-Continuous ^a
TA=25°C
16
I_DM
-Pulsed ^b
46.8
I_AS
Avalanche Current ^c
9
E_AS
Avalanche Energy ^c
20.25
P_D
Maximum Power Dissipation ^a TA=25°C
60
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 175
THERMAL CHARACTERISTICS
R _JC
Thermal Resistance, Junction-to-Case
2.5
R _JA
Thermal Resistance, Junction-to-Ambient
50
Units
V
V
A
A
A
mJ
W
°C
°C/W
°C/W
Feb,12,2010
1
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