STUD608S Datasheet, PDF (1/8 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

STU/D608S
SamHop Microelectronics Corp.
Feb. 06 2007
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
ID
RDS(ON) ( m Ω ) Max
60V 16A
55 @ VGS = 10V
65 @ VGS = 4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-252 and TO-251 Package.
ESD Protected.
D
G
S
STU SERIES
TO-252AA(D-PAK)
G
DS
STD SERIES
TO-251(l-PAK)
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
20
V
25 C
16
A
Drain Current-Continuous ^a @Ta
ID
70 C
10
A
-Pulsed ^b
IDM
30
A
Drain-Source Diode Forward Current ^a
IS
10
A
Ta= 25 C
50
Maximum Power Dissipation ^a
PD
W
Ta=70 C
35
Operating Junction and Storage
Temperature Range
TJ, TSTG
-55 to 175
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
R JC
3
C /W
Thermal Resistance, Junction-to-Ambient
R JA
50
C /W
1