STUD602S Datasheet, PDF (1/8 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

SamHop Microelectronics Corp.
Green
Product
STU/D602S
Aug 26,2006
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
ID
RDS(ON) ( m Ω ) Max
60V
22A
30 @ VGS = 10V
38 @ VGS = 4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-252 and TO-251 Package.
D
G
S
STU SERIES
TO-252AA(D-PAK)
G
DS
STD SERIES
TO-251(l-PAK)
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
20
V
a
25 C
22
A
Drain Current-Continuous @Ta
ID
70 C
17
A
-Pulsed ^b
IDM
60
A
Drain-Source Diode Forward Current ^a
IS
15
A
Ta= 25 C
50
Maximum Power Dissipation ^a
PD
W
Ta=70 C
35
Operating Junction and Storage
Temperature Range
TJ, TSTG
-55 to 175
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
R JC
3
C /W
Thermal Resistance, Junction-to-Ambient
R JA
50
C /W