STUD458S Datasheet, PDF (1/8 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

STU/D458S ^Gre
Pro
SamHop Microelectronics Corp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID
RDS(ON) (m ) Max
8 @VGS=10V
40V
48A
11 @VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-252 and TO-251 Package.
G
S
STU SERIES
TO-252AA(D-PAK)
G
DS
STD SERIES
TO-251(I-PAK)
ABSOLUTE MAXIMUM RATINGS (TC=25^°C unless otherwise noted⁾
Symbol Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID
Drain Current-Continuous ^a
IDM
-Pulsed ^b
TC=25°C
TC=70°C
EAS
Single Pulse Avalanche Energy ^d
PD
Maximum Power Dissipation ^a
TC=25°C
TC=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R _JC
Thermal Resistance, Junction-to-Case ^a
R _JA
Thermal Resistance, Junction-to-Ambient ^a
Limit
40
±20
48
39
147
93
42
27
-55 to 150
3
50
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Mar,02,2011
www.samhop.com.tw