STUD419S Datasheet, PDF (1/8 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

STU/D419S ^Green
Product
Sa mHop Microelectronics C orp.
P-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID
RDS(ON) (mΩ) Max
-40V
-58A
11.5 @ VGS=10V
16 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
G
S
STU SERIES
TO - 252AA( D- PAK )
G
DS
STD SERIES
TO - 251( I ^- PAK ⁾
ABSOLUTE MAXIMUM RATINGS (TA=25^°C unless otherwise noted⁾
Symbol Parameter
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
Drain Current-Continuous(Package limited) T_C=25°C
I_D
-Continuous(Silicon limited)
T_C=25°C
-Continuous ^a
TA=25°C
I_DM
-Pulsed ^b
E_AS
Sigle Pulse Avalanche Energy ^d
Maximum Power Dissipation
P_D
Maximum Power Dissipation ^a
T_C=25°C
TA=25°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R _JC
Thermal Resistance, Junction-to-Case
R _JA
Thermal Resistance, Junction-to-Ambient ^a
Limit
-40
±20
-50
-58
-11
-175
224
70
2.5
-55 to 150
1.8
50
Units
V
V
A
A
A
A
mJ
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Sep,15,2008
www.samhop.com.tw