STUD30N15 Datasheet, PDF (1/9 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

STU/D30N15 ^Green
Product
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.1
PRODUCT SUMMARY
VDSS
ID
RDS(ON) (mΩ) Typ
150V
22A
62 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-252 and TO-251 Package.
G
S
STU SERIES
TO-252AA (D-PAK)
G
DS
STD SERIES
TO-251 (I-PAK)
ABSOLUTE MAXIMUM RATINGS (T_C=25^°C unless otherwise noted⁾
Symbol Parameter
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
Drain Current-Continuous
T_C=25°C
TC=70°C
I_DM
-Pulsed ^a
P_D
Maximum Power Dissipation
T_C=25°C
TC=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R _JC
Thermal Resistance, Junction-to-Case
R _JA
Thermal Resistance, Junction-to-Ambient
Limit
150
±20
22
18.4
64
75
52.5
-55 to 175
2
50
Units
V
V
A
A
A
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
May,30,2014
www.samhop.com.tw