STUD3055L Datasheet, PDF (1/8 Pages) SamHop Microelectronics Corp. – S uper high dense cell design for low R DS (ON).

S T U /D3055L ^Green
Product
S amHop Microelectronics C orp.
Nov,01 2006 ver1.3
N-C hannel Logic Level E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
VDS S
ID
R DS (ON) ( m Ω ) Max
25V
12A
60 @ VGS = 10V
85 @ VGS = 4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
TO-252 and TO-251 P ackage.
D
G
S
S TU S E R IE S
T O -252AA(D-P AK )
G
DS
S TD S E R IE S
TO-251(l-P AK)
D
G
S
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
Drain-S ource Voltage R ating
S ymbol
Limit
Unit
V s pike ^d
30
V
Drain-S ource Voltage
VDS
25
V
Gate-S ource Voltage
VGS
16
V
Drain C urrent-C ontinuous @ Tc=25 C
ID
12
A
a
-P ulsed
IDM
40
A
Drain-S ource Diode Forward C urrent
IS
5
A
Maximum P ower Dissipation @ Tc=25 C
PD
50
W
Operating and S torage Temperature R ange _{TJ, TS TG}
-55 to 175
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-C ase
Thermal R esistance, Junction-to-Ambient
R JC
R JA
1
3
C /W
50
C /W